LMH6702QML_17 Datasheet, PDF (1/17 Pages) Texas Instruments – 1.7 GHz, Ultra Low Distortion, Wideband Op Amp

LMH6702QML
www.ti.com
SNOSAQ2E – JULY 2005 – REVISED MARCH 2013
1.7 GHz, Ultra Low Distortion, Wideband Op Amp
Check for Samples: LMH6702QML
FEATURES
1
•2 V_S = ±5V, T_A = 25°C, A_V = +2V/V, R_L = 100Ω,
V_OUT = 2V_PP, Typical Unless Noted:
• Available with Radiation Ensurance
– High Dose Rate 300 krad(Si)
– ELDRS Free 300 krad(Si)
• −3dB Bandwidth (V_OUT = 0.2 V_PP) 720 MHz
• Low Noise 1.83nV/√Hz
• Fast Settling to 0.1% 13.4ns
• Fast Slew Rate 3100V/μs
• Supply Current 12.5mA
• Output Current 80mA
• Low Intermodulation Distortion (75MHz)
−67dBc
• Improved Replacement for CLC409 and
CLC449
APPLICATIONS
• Flash A/D Driver
• D/A transimpedance Buffer
• Wide Dynamic Range IF Amp
• Radar/Communication Receivers
• Line Driver
• High Resolution Video
DESCRIPTION
The LMH6702 is a very wideband, DC coupled
monolithic operational amplifier designed specifically
for wide dynamic range systems requiring exceptional
signal fidelity. Benefitting from TI's current feedback
architecture, the LMH6702 offers unity gain stability at
exceptional speed without need for external
compensation.
With its 720MHz bandwidth (A_V = 2V/V, V_O = 2V_PP),
10-bit distortion levels through 60MHz (R_L = 100Ω),
1.83nV/√Hz input referred noise and 12.5mA supply
current, the LMH6702 is the ideal driver or buffer for
high-speed flash A/D and D/A converters.
Wide dynamic range systems such as radar and
communication receivers, requiring a wideband
amplifier offering exceptional signal purity, will find the
LMH6702's low input referred noise and low harmonic
and intermodulation distortion make it an attractive
high speed solution.
The LMH6702 is constructed using TI's VIP10
complimentary bipolar process and TI's proven
current feedback architecture.
Connection Diagrams
N/C
1
V_INV
2
V_NON-INV
3
-V_CC
4
8
N/C
7
+V_CC
6
V_OUT
5
N/C
Figure 1. 8-Lead CDIP (NAB)
Top View
N/C
1
V_INV
2
V_NON-INV
3
-V_CC
4
N/C
5
10
N/C
9
+V_CC
8
V_OUT
7
N/C
6
N/C
Figure 2. 10-Lead CLGA (NAC)
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2013, Texas Instruments Incorporated