LMH6583_14 Datasheet, PDF (2/24 Pages) Texas Instruments – LMH6583 16x8 550 MHz Analog Crosspoint Switch, Gain of 2

LMH6583
SNOSAP5E – APRIL 2006 – REVISED MARCH 2013
Connection Diagram
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48
IN8
VEE
IN9
VCC
IN10
VEE
IN11
VCC
IN12
VEE
IN13
VCC
IN14
VEE
IN15
VCC
64
GND
32
OUT7
GND
VEE
GND
OUT6
VCC
OUT5
GND
VEE
GND
OUT4
VCC
BCST
CFG
CLK
DOUT
1
16
Figure 1. 64-Pin Exposed Pad HTQFP
See Package Number PAP0064A
SWITCH
MATRIX
CFG
BCST
DATA IN
CS
CLK
MODE
136
CONFIGURATION
REGISTER
40
LOAD
REGISTER
RST
DATA OUT
Figure 2. Block Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings ⁽¹⁾⁽²⁾
ESD Tolerance ⁽³⁾
Human Body Model
Machine Model
V_S
I_IN (Input Pins)
I_OUT
Input Voltage Range
Maximum Junction Temperature
Storage Temperature Range
Soldering Information
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
2000V
200V
±6V
±20 mA
(4)
V^− to V⁺
+150°C
−65°C to +150°C
235°C
260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see ±3.3V Electrical
Characteristics and ±5V Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The maximum output current (I_OUT) is determined by device power dissipation limitations.
2
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