AM5718_16 Datasheet, PDF (166/394 Pages) Texas Instruments – Sitara Processors Silicon Revision 2.0

AM5718, AM5716
SPRS957C – MARCH 2016 – REVISED NOVEMBER 2016
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Table 5-10. LVCMOS DDR DC Electrical Characteristics (continued)
PARAMETER
MIN
NOM
MAX
UNIT
Z_O
Output impedance (drive
strength)
l[2:0] = 000
(Imp80)
80
Ω
l[2:0] = 001
60
(Imp60)
l[2:0] = 010
48
(Imp48)
l[2:0] = 011
40
(Imp40)
l[2:0] = 100
34
(Imp34)
Single-Ended Receiver Mode
V_IH
High-level input threshold
DDR3/DDR3L
V_IL
Low-level input threshold
DDR3/DDR3L
V_CM
Input common-mode voltage
VREF+0.1
-0.2
VREF -
10%vdds
VDDS+0.2
V
VREF-0.1
V
VREF+
V
10%vdds
C_PAD
Pad capacitance (including package capacitance)
Differential Receiver Mode
3
pF
V_SWING
V_CM
Input voltage swing
Input common-mode voltage
DDR3/DDR3L
0.2
VREF -
10%vdds
vdds+0.4
V
VREF+
V
10%vdds
C_PAD
Pad capacitance (including package capacitance)
3
pF
(1) VDDS in this table stands for corresponding power supply (i.e. vdds_ddr1). For more information on the power supply name and the
corresponding ball, see Table 4-2, POWER [10] column.
(2) VREF in this table stands for corresponding Reference Power Supply (i.e. ddr1_vref0). For more information on the power supply name
and the corresponding ball, see Table 4-2, POWER [10] column.
5.7.2 HDMIPHY DC Electrical Characteristics
The HDMIPHY DC Electrical Characteristics are compliant with the HDMI 1.4a specification and are not
reproduced here.
5.7.3 Dual Voltage LVCMOS I²C DC Electrical Characteristics
Table 5-11 summarizes the DC electrical characteristics for Dual Voltage LVCMOS I2C Buffers.
NOTE
For more information on the I/O cell configurations, see the Control Module section of the
Device TRM.
Table 5-11. Dual Voltage LVCMOS I2C DC Electrical Characteristics
PARAMETER
Signal Names in MUXMODE 0: i2c2_scl; i2c1_scl; i2c1_sda; i2c2_sda;
Balls: F17 / C20 / C21 / C25
I²C Standard Mode – 1.8 V
V_IH
Input high-level threshold
V_IL
Input low-level threshold
V_hys
Hysteresis
I_IN
Input current at each I/O pin with an input voltage
between 0.1*VDDS to 0.9*VDDS
MIN
0.7*VDDS
0.1*VDDS
NOM
MAX
0.3*VDDS
12
UNIT
V
V
V
µA
166 Specifications
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