BQ25703A Datasheet, PDF (16/81 Pages) Texas Instruments – I2C Multi-Chemistry Battery Buck-Boost Charge Controller With System Power Monitor and Processor Hot Monitor

bq25703A
SLUSCU1 – MAY 2017
Electrical Characteristics (continued)
over T_J = –40 to 125°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
INTERFACE
LOGIC INPUT (SDA, SCL, EN_OTG)
V_{IN_ LO}
Input low threshold
I2C
V_{IN_ HI}
Input high threshold
I2C
LOGIC OUTPUT OPEN DRAIN (SDA, CHRG_OK, CMPOUT)
V_{OUT_ LO}
Output saturation voltage
V_{OUT_ LEAK}
Leakage current
LOGIC OUTPUT OPEN DRAIN SDA
5-mA drain current
V=7V
V_{OUT_ LO_SDA}
Output Saturation Voltage
V_{OUT_ LEAK_SDA}
Leakage Current
LOGIC OUTPUT OPEN DRAIN CHRG_OK
5 mA drain current
V = 7V
V_{OUT_ LO_CHRG_OK}
Output Saturation Voltage
V_{OUT_ LEAK _CHRG_OK} Leakage Current
LOGIC OUTPUT OPEN DRAIN CMPOUT
5 mA drain current
V = 7V
V_{OUT_ LO_CMPOUT}
Output Saturation Voltage
V_{OUT_ LEAK _CMPOUT} Leakage Current
LOGIC OUTPUT OPEN DRAIN (PROCHOT)
5 mA drain current
V = 7V
V_{OUT_ LO_PROCHOT}
Output saturation voltage
50-Ω pullup to 1.05 V / 5-mA
load
V_{OUT_ LEAK_PROCHOT} Leakage current
ANALOG INPUT (ILIM_HIZ)
V = 5.5 V
V_{HIZ_ LO}
Voltage to get out of HIZ
mode
ILIM_HIZ pin rising
V_{HIZ_ HIGH}
Voltage to enable HIZ mode ILIM_HIZ pin falling
ANALOG INPUT (CELL_BATPRESZ)
V_{CELL_4S}
4S
REGN = 6 V, as percentage
of REGN
V_{CELL_3S}
3S
REGN = 6 V, as percentage
of REGN
V_{CELL_2S}
2S
REGN = 6 V, as percentage
of REGN
V_{CELL_1S}
1S
REGN = 6 V, as percentage
of REGN
V_{CELL_BATPRESZ_RISE} Battery is present
V_{CELL_BATPRESZ_FALL} Battery is removed
ANALOG INPUT (COMP1, COMP2)
CELL_BATPRESZ falling
I_{LEAK_COMP1}
I_{LEAK_COMP2}
COMP1 Leakage
COMP2 Leakage
7.6 Timing Requirements
I2C TIMING CHARACTERISTICS
t_r
t_f
t_W(H)
t_W(L)
t_SU(STA)
t_H(STA)
SCLK/SDATA rise time
SCLK/SDATA fall time
SCLK pulse width high
SCLK Pulse Width Low
Setup time for START condition
START condition hold time after which first clock pulse is generated
16
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MIN
TYP
MAX UNIT
1.3
–1
–1
–1
–1
–1
0.8
68.4%
51.7%
35%
18.4%
18%
–120
–120
0.4 V
V
0.4 V
1 mA
0.4 V
1 mA
0.4 V
1 mA
0.4 V
1 mA
300 mV
1 mA
V
0.4 V
75%
55%
40%
25%
65%
49.1%
31.6%
15%
120 nA
120 nA
MIN TYP MAX UNIT
1 µs
300 ns
4
50 µs
4.7
µs
4.7
µs
4
µs
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