LM3S5B91 Datasheet, PDF (1257/1331 Pages) Texas Instruments – Stellaris® LM3S5B91 Microcontroller

Stellaris^® LM3S5B91 Microcontroller
Table 25-19. EPI SDRAM Interface Characteristics (continued)
Parameter No Parameter
Parameter Name
Min
E8
T_H
CLK to input hold
0
E9
T_PU
Power-up time
100
E10
T_RP
Precharge all banks
20
E11
T_RFC
Auto refresh
66
E12
T_MRD
Program mode register
40
a. The EPI SDRAM interface must use 8-mA drive.
Nom Max
-
-
-
-
-
-
-
-
-
-
Figure 25-11. SDRAM Initialization and Load Mode Register Timing
CLK
(EPI0S31)
E1
CKE
(EPI0S30)
Command
(EPI0S[29:28,19:18])
NOP
PRE
DQMH, DQML
(EPI0S[17:16])
AD11, AD[9:0]
(EPI0S[11,9:0]
AD10
(EPI0S[10])
BAD[1:0]
(EPI0S[14:13])
All Banks
Single Bank
AD [15,12]
(EPI0S [15,12])
E9
E10
NOP
E11
E2
AREF
E3
NOP
PRE
E12
Notes:
1. If CS is high at clock high time, all applied commands are NOP.
2. The Mode register may be loaded prior to the auto refresh cycles if desired.
3. JEDEC and PC100 specify three clocks.
4. Outputs are guaranteed High-Z after command is issued.
NOP
AREF
NOP
LOAD
Code
Code
NOP
AREF
NOP
Unit
ns
µs
ns
ns
ns
Active
Row
Row
Bank
Figure 25-12. SDRAM Read Timing
CLK
(EPI0S31)
CKE
(EPI0S30)
CSn
(EPI0S29)
WEn
(EPI0S28)
RASn
(EPI0S19)
CASn
(EPI0S18)
DQMH, DQML
(EPI0S [17:16])
AD [15:0]
(EPI0S [15:0])
E4
E5
Row
Activate
NOP
AD [15:0] driven out
E6
E7
E8
NOP
Column
Read
NOP
AD [15:0] driven out
Data 0
Data 1
...
Burst
Term
AD [15:0] driven in
Data n
January 20, 2012
Texas Instruments-Production Data
1257