LMH6504 Datasheet, PDF (10/29 Pages) National Semiconductor (TI) – Wideband, Low Power, Variable Gain Amplifier

LMH6504
SNOSA96D – NOVEMBER 2003 – REVISED MARCH 2013
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Typical Performance Characteristics (continued)
Unless otherwise specified: V_S = ±5V, T_A = 25°C, V_G = V_GMAX, R_F = 1 kΩ, R_G = 100Ω, V_IN = 0.1V, input terminated in 50Ω. R_L
= 100Ω, Typical values.
Input Referred Noise Density vs. Frequency
Output Voltage vs. Output Current (Sinking)
1000
1000
5
25°C
-40°C
85°C
4
100
VOLTAGE
100
3 _-40°C
10
10
CURRENT
2
25°C
85°C
1
1
1
1 10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 27.
Output Voltage vs. Output Current (Sourcing)
5
85°C
-40°C
4
25°C
3 _-40°C
2
85°C
1
0
0 20 40 60 80 100 120
I_OUT (mA)
Figure 29.
-120
-110
-100
HD vs. P_OUT
HD3, 100 kHz
HD2, 100 kHz
-90
HD3, 2 MHz
-80
-70
-60
HD2, 2 MHz
-50
-40
HD2, 25 MHz HD3, 25 MHz
-30
V_G = V_GMAX
-20
-15 -10 -5 0 5 10 15 20
P_OUT (dBm)
Figure 31.
0
0 20 40 60 80 100 120
I_OUT (mA)
Figure 28.
Distortion vs. Frequency
-30
V_G = V_{G_MAX}
-40 VOUT = 1 VPP
-50
THD
-60
-70
HD3
-80
HD2
-90
-100
100k
1M
10M 30M
FREQUENCY (Hz)
Figure 30.
-100
-90
THD vs. P_OUT
100 kHz
V_G = V_{G_MAX}
-80
1 MHz
-70
2 MHz
-60
-50
20 MHz
-40
25 MHz
-30
-15 -10 -5 0 5 10 15 20
P_OUT (dBm)
Figure 32.
10
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