TC217_08 Datasheet, PDF (1/21 Pages) Texas Instruments – pixel ccd image sensor

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• High-Resolution, Solid-State Monochrome
Image Sensor for Video or Still-Picture
Photography
• Frame Transfer With Two Field Memories
Allows Multimode Operation
• 1134 (H) x 486 (V) Active Elements in
Image-Sensing Area
• 11-mm Image-Area Diagonal is Compatible
With 2/3” Vidicon Optics
• Fast Clear Capability
• Electron-Hole Recombination Antiblooming
• Dynamic Range . . . More Than 60 dB
• High Photoresponse Uniformity
• On-Chip Cross-Coupled Resets for Easy
Off-Chip Implementation of CCSH Video
Signal Processing
• Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
TC217
1158ĆĂ×Ă488ĆPIXEL CCD IMAGE SENSOR
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SOCS015C − OCTOBER 1989 − REVISED JUNE 1996
DUAL-IN-LINE PACKAGE
(TOP VIEW)
SUB ¹
ABG 2
IAG 3
SAG1 4
ADB 5
OUT3 6
OUT2 7
OUT1 8
AMP GND 9
CDB ¹⁰
SUB ¹¹
22 SUB
21 TDB
20 ABG
19 IAG
18 TMG
17 SAG2
16 SRG3
15 SRG2
14 SRG1
13 TRG
12 SUB
description
The TC217 is a frame-transfer charge-coupled-device (CCD) image sensor with two field memories. It is
suitable for use in NTSC video or still-picture photography applications. Its image-sensing area is configured
into 488 lines; 486 of these are active and the remaining two are used for dark reference. Each line is configured
into 1158 pixels with 1134 active and 24 for dark reference. The TC217 has a standard aspect ratio of 4:3 and
a standard 11-mm image-sensing-area diagonal. Its blooming protection, which is an integral part of each pixel,
is based on electron-hole recombination and is activated by clocking the antiblooming gate.
One important aspect of the TC217 high-resolution sensor is its ability to simultaneously capture both fields of
a TV frame. Its two independently addressable memories allow separate storage of each field and operation
in a variety of modes, including EIA-170 (formerly RS-170) with true interlace, EIA-170 with pseudointerlace,
and nonstandard pseudointerlace with a resolution of 972 lines.
A unique multiplexer section (see Figure 3) rearranges the horizontal pixels into vertical groups of three and
separates and loads the image into the two field memories. The independent addressing of each field memory
provides flexibility for different modes of operation. The interdigitated layout of the memories allows each
memory to share the same bank of three serial registers and associated charge detection amplifiers (see
Figure 4 and the functional block diagram). Each register and associated amplifier reads out every third column
of the image area (see Figure 5). The three amplifiers are optimized dual source-followers that allow the use
of off-chip double-correlated clamp-sample-and-hold amplifiers for removing KTC noise.
The TC217 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking. The TC217 is characterized for operation
from −10°C to 40°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright  1996, Texas Instruments Incorporated
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