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AM1707 Datasheet, PDF (70/198 Pages) Texas Instruments – AM1707 ARM Microprocessor
AM1707
SPRS637 – FEBRUARY 2010
www.ti.com
Table 6-22. EMIFA Asynchronous Memory Timing Requirements (1) (continued)
No. PARAMETER
28 tsu (EMWEL-EMWAIT)
Setup Time, EM_WAIT asserted before end of
Strobe Phase(2)
MIN
4E+3
NOM
MAX
UNIT
ns
Table 6-23. EMIFA Asynchronous Memory Switching Characteristics(1) (2) (3)
No.
PARAMETER
MIN
NOM
MAX
UNIT
READS and WRITES
1 td(TURNAROUND) Turn around time
READS
(TA)*E - 3
(TA)*E
(TA)*E + 3 ns
3
tc(EMRCYCLE)
EMIF read cycle time (EW = 0)
EMIF read cycle time (EW = 1)
(RS+RST+RH)*E
-3
(RS+RST+RH)*E
(RS+RST+RH)*E
+3
ns
(RS+RST+RH+(E (RS+RST+RH+(EW (RS+RST+RH+(
WC*16))*E - 3
C*16))*E EWC*16))*E + 3
ns
Output setup time, EMA_CE[5:2] low to
EMA_OE low (SS = 0)
4 tsu(EMCEL-EMOEL) Output setup time, EMA_CE[5:2] low to
EMA_OE low (SS = 1)
(RS)*E-3
-3
(RS)*E
0
(RS)*E+3 ns
+3 ns
Output hold time, EMA_OE high to
EMA_CE[5:2] high (SS = 0)
5 th(EMOEH-EMCEH) Output hold time, EMA_OE high to
EMA_CE[5:2] high (SS = 1)
(RH)*E - 3
-3
(RH)*E
0
(RH)*E + 3 ns
+3 ns
6
tsu(EMBAV-EMOEL)
Output setup time, EMA_BA[1:0] valid to
EMA_OE low
(RS)*E-3
(RS)*E
(RS)*E+3 ns
7
th(EMOEH-EMBAIV)
Output hold time, EMA_OE high to
EMA_BA[1:0] invalid
(RH)*E-3
(RH)*E
(RH)*E+3 ns
8
tsu(EMBAV-EMOEL)
Output setup time, EMA_A[13:0] valid to
EMA_OE low
(RS)*E-3
(RS)*E
(RS)*E+3 ns
9
th(EMOEH-EMAIV)
Output hold time, EMA_OE high to
EMA_A[13:0] invalid
(RH)*E-3
(RH)*E
(RH)*E+3 ns
10 tw(EMOEL)
EMA_OE active low width (EW = 0)
EMA_OE active low width (EW = 1)
(RST)*E-3
(RST)*E
(RST)*E+3 ns
(RST+(EWC*16))*
E-3
(RST+(EWC*16))*E
(RST+(EWC*16)
)*E+3
ns
11 td(EMWAITH-
EMOEH)
Delay time from EMA_WAIT deasserted to
EMA_OE high
WRITES
3E-3
4E
4E+3 ns
15 tc(EMWCYCLE)
EMIF write cycle time (EW = 0)
EMIF write cycle time (EW = 1)
(WS+WST+WH)*
E-3
(WS+WST+WH)*E
(WS+WST+WH)*
E+3
ns
(WS+WST+WH+(
EWC*16))*E - 3
(WS+WST+WH+(E (WS+WST+WH+
WC*16))*E (EWC*16))*E + 3
ns
Output setup time, EMA_CE[5:2] low to
EMA_WE low (SS = 0)
16 tsu(EMCEL-EMWEL) Output setup time, EMA_CE[5:2] low to
EMA_WE low (SS = 1)
(WS)*E - 3
-3
(WS)*E
0
(WS)*E + 3 ns
+3 ns
Output hold time, EMA_WE high to
EMA_CE[5:2] high (SS = 0)
17 th(EMWEH-EMCEH) Output hold time, EMA_WE high to
EMA_CE[5:2] high (SS = 1)
(WH)*E-3
-3
(WH)*E
0
(WH)*E+3 ns
+3 ns
18 tsu(EMDQMV-
EMWEL)
Output setup time, EMA_BA[1:0] valid to
EMA_WE low
(WS)*E-3
(WS)*E
(WS)*E+3 ns
(1) TA = Turn around, RS = Read setup, RST = Read strobe, RH = Read hold, WS = Write setup, WST = Write strobe, WH = Write hold,
MEWC = Maximum external wait cycles. These parameters are programmed via the Asynchronous Bank and Asynchronous Wait Cycle
Configuration Registers. These support the following range of values: TA[4-1], RS[16-1], RST[64-1], RH[8-1], WS[16-1], WST[64-1],
WH[8-1], and MEW[1-256].
(2) E = EMA_CLK period or in ns. EMA_CLK is selected either as SYSCLK3 or the PLL output clock divided by 4.5. As an example, when
SYSCLK3 is selected and set to 100MHz, E=10ns.
(3) EWC = external wait cycles determined by EMA_WAIT input signal. EWC supports the following range of values EWC[256-1]. Note that
the maximum wait time before timeout is specified by bit field MEWC in the Asynchronous Wait Cycle Configuration Register.
70
Peripheral Information and Electrical Specifications
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