BQ2018TS-E1 Datasheet, PDF (7/25 Pages) Texas Instruments – Power Minder IC

bq2018
Table 5. bq2018 Command and Status Registers
Symbol
CMDR
DCRH
DCRL
CCRH
CCRL
SCRH
SCRL
DTCH
DTCL
CTCH
CTCL
MODE/
WOE
TMP/CLR
OFR
RAM
Register
Name
Loc.
(hex)
Command
register
-
Discharge count
register high
7f
byte
Discharge
count register 7e
low byte
Charge count
register
7d
high byte
Charge count
register
7c
low byte
Self-discharge
count register 7b
high byte
Self-discharge
count register 7a
low byte
Discharge
time count
79
high byte
Discharge
time count
78
low byte
Charge
time count
77
high byte
Charge
time count
76
low byte
MODE/ wake-
up output
enable
Tempera-
ture/Clear
register
Offset
register
User
memory
75
74
73
72-00
Read/
Write _7(MSB)
Write W/R
6
AD6
5
AD5
Control Field
4
3
AD4 AD3
2
AD2
1 0(LSB)
AD1 AD0
Read DCRH7 DCRH6 DCRH5 DCRH4 DCRH3 DCRH2 DCRH1 DCRH0
Read DCRL7 DCRL6 DCRL5 DCRL4 DCRL3 DCRL2 DCRL1 DCRL0
Read CCRH7 CCRH6 CCRH5 CCRH4 CCRH3 CCRH2 CCRH1 CCRH0
Read CCRL7 CCRL6 CCRL5 CCRL4 CCRL3 CCRL2 CCRL1 CCRL0
Read SCRH7 SCRH6 SCRH5 SCRH4 SCRH3 SCRH2 SCRH1 SCRH0
Read SCRL7 SCRL6 SCRL5 SCRL4 SCRL3 SCRL2 SCRL1 SCRL0
Read DTCH7 DTCH6 DTCH5 DTCH4 DTCH3 DTCH2 DTCH1 DTCH0
Read DTCL7 DTCL6 DTCL5 DTCL4 DTCL3 DTCL2 DTCL1 DTCL0
Read CTCH7 CTCH6 CTCH5 CTCH4 CTCH3 CTCH2 CTCH1 CTCH0
Read CTCL7 CTCL6 CTCL5 CTCL4 CTCL3 CTCL2 CTCL1 CTCL0
Read/
write
OVRDQ
CAL
STC
STD WOE3 WOE2 WOE1
0
Read/
write
Read/
write
Read/
write
TMP2
OFR7
-
TMP1
OFR6
-
TMP0
OFR5
-
CTC
OFR4
-
DTC
OFR3
-
SCR
OFR2
-
CCR
OFR1
-
DCR
OFR0
-
Notes: 1. MODE/WOE register bit 0 is set to zero at startup and should not be
written to 1 for proper bq2018 operation.
2. OFR value is in two’s complement.
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