BQ2018TS-E1 Datasheet, PDF (12/25 Pages) Texas Instruments – Power Minder IC

bq2018
Absolute Maximum Ratings
Symbol
Parameter
V_CC
HDQ
All other pins
I_REG
V_SR1 / V_SR2
Relative to V_SS
Relative to V_SS
REG to V_SS
Relative to V_SS
T_OPR
Operating
temperature
Minimum Maximum Uni
t
Notes
-0.3
+6.0
V
-0.3
+6.0
V
V_SS -0.3V V_CC +3.0V
V
1.0
mA
A 100kΩ series resistor is
-0.3
+6.0
V recommended to protect SR1 / SR2
in case of a shorted battery.
- 20
+70
°C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Electrical Characteristics (TA = TOPR)
Symbol
Parameter
Minimum Typical Maximum Unit
Notes
V_CC
I_CC
I_CC2
I_RBI
V_SR
Supply voltage
Operating current
Sleep
RBI current
Sense resistor input
2.8
3.5
-
-
-
-
-200
4.25
3.7
60
70
-
-
-
5.5
V REG = No connect
3.9
V V_CC derived from REG, Note 3
70
µA V_CC,HDQ = 3.7V
80
µA V_CC,HDQ = 5.5V
10
µA V_CC = 5.5V
100
nA V_CC < 2.4V
V_SR1 < V_SR2 = discharge;
200
mV V_SR1 > V_SR2 = charge
Note 2
R_SR
SR1 / SR2 input impedance
10
I_OL
Open-drain sink current
-
-
-
MΩ -200mV < V_SR < 200mV
-
2.0
mA ^{VOL = VSS + 0.3V}
WAKE, HDQ
V_IHDQ
V_ILDQ
HDQ input high
HDQ input low
2.5
-
-
V
-
-
0.8
V
Notes:
1. All voltages relative to V_SS.
2. V_SR1/_SR2 + V_OS. V_OS is affected by PC board layout. Follow proper layout guidelines for optimal
performance.
3. Can be guaranteed by design when using an SST108 or equivalent JFET.
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