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CD74HC40105 Datasheet, PDF (6/14 Pages) Texas Instruments – High Speed CMOS Logic 4-Bit x 16-Word FIFO Register
CD74HC40105, CD74HCT40105
DC Electrical Specifications (Continued)
TEST
CONDITIONS
PARAMETER
Three-State Leakage
Current
SYMBOL VI (V) IO (mA)
IOZ VIL or VIH VO =
VCC or
GND
VCC
(V)
6
25oC
-40oC TO 85oC -55oC TO 125oC
MIN TYP MAX MIN MAX MIN MAX UNITS
-
-
±0.5
-
±5
-
±10
µA
HCT TYPES
High Level Input
Voltage
VIH
-
-
4.5 to
2
-
-
2
-
2
-
V
5.5
Low Level Input
Voltage
VIL
-
-
4.5 to
-
-
0.8
-
0.8
-
0.8
V
5.5
High Level Output
VOH VIH or VIL -0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
Voltage
CMOS Loads
High Level Output
Voltage
TTL Loads
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL 0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
Low Level Output
Voltage
TTL Loads
4
4.5
-
-
0.26
-
0.33
-
0.4
V
Input Leakage
Current
II
VCC and
0
5.5
-
-
±0.1
-
±1
-
±1
µA
GND
Quiescent Device
Current
ICC
VCC or
0
GND
5.5
-
-
8
-
80
-
160
µA
Three-State Leakage
IOZ VIL or VIH VO =
5.5
-
-
±0.5
-
±5
-
±10
µA
Current
VCC or
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note)
VCC
-2.1
-
4.5 to
-
100 360
-
450
-
490
µA
5.5
NOTE: For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
OE
0.75
SI, SO
0.4
Dn
0.3
MR
1.5
NOTE:
360µA
mUanxitaLto2a5doiCs.∆ICC
limit
specified
in
DC
Electrical
Table,
e.g.,
6