BC447 Datasheet, PDF (6/36 Pages) ON Semiconductor – High Voltage Transistors

THS4271
THS4275
SLOS397E − JULY 2002 − REVISED JANUARY 2004
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ELECTRICAL CHARACTERISTICS V_S = 5 V (continued)
RF = 249 Ω, R_L = 499 Ω, G = +2, unless otherwise noted
TYP
PARAMETER
TEST CONDITIONS
25°C
POWER SUPPLY
Specified operating voltage
5
Maximum quiescent current
20
Minimum quiescent current
20
Power supply rejection (+PSRR) VS+ = 5.5 V to 4.5 V, VS− = 0 V
85
Power supply rejection (−PSRR) VS+ = 5 V, VS− = −0.5 V to 0.5 V
75
25°C
OVER TEMPERATURE
0°C to −40°C to
70°C
85°C
UNITS
15
15
15
V
22
25
27
mA
18
16
14
mA
75
62
62
dB
65
60
60
dB
POWER-DOWN CHARACTERISTICS (THS4275 Only)
Enable
REF+1.8
V
REF = 0 V, or V_{S− Power-down}
REF+1
V
Power-down voltage level(1)
Enable
REF−1
V
REF = V_S+ or Floating _Power-down
REF−1.7
V
Power-down quiescent current
Turnon time delay(t(ON))
Turnoff time delay (t(OFF))
Input impedance
PD = Ref +1.0 V, Ref = 0 V
PD = Ref −1.7 V, Ref = VS+
50% of final value
50% of final value
f = 1 MHz
650
800
900
1000
µA
650
800
900
1000
µA
4
µs
3
µs
6
GΩ
Output impedance
100
kΩ
(1) _{For detail information on the power-down circuit, see the powerdown section in the application information of this data sheet.}
MIN/
TYP/
MAX
Max
Max
Min
Min
Min
Min
Max
Min
Max
Max
Max
Typ
Typ
Typ
Typ
6