LPV521MGX Datasheet, PDF (5/29 Pages) Texas Instruments – LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier

LPV521
www.ti.com
SNOSB14C – AUGUST 2009 – REVISED FEBRUARY 2013
3.3V DC Electrical Characteristics⁽¹⁾ (continued)
Unless otherwise specified, all limits guaranteed for T_A = 25°C, V⁺ = 3.3V, V^− = 0V, V_CM = V_O = V⁺/2, and R_L > 1 MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(2)
Typ
(3)
Max
(2)
Units
V_O
Output Swing High
Output Swing Low
I_O
Output Current⁽⁵⁾
I_S
Supply Current
R_L = 100 kΩ to V⁺/2
V_IN(diff) = 100 mV
R_L = 100 kΩ to V⁺/2
V_IN(diff) = −100 mV
Sourcing, V_O to V^–
V_IN(diff) = 100 mV
Sinking, V_O to V⁺
V_IN(diff) = −100 mV
V_CM = 0.3V
V_CM = 3V
3
50
50
mV
from either
2
50
rail
50
5
11
4
mA
5
12
4
346
400
600
nA
471
600
860
(5) The short circuit test is a momentary open loop test.
3.3V AC Electrical Characteristics⁽¹⁾
Unless otherwise is specified, all limits guaranteed for T_A = 25°C, V⁺ = 3.3V, V^− = 0V, V_CM = V_O = V⁺/2, and R_L > 1 MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
GBW
Gain-Bandwidth Product
C_L = 20 pF, R_L = 100 kΩ
6.2
SR
Slew Rate
A_V = +1,
Falling Edge
2.9
V_IN = 0V to 3.3V _{Rising Edge}
2.5
θ_m
Phase Margin
C_L = 20 pF, R_L = 10 kΩ
73
G_m
Gain Margin
C_L = 20 pF, R_L = 10 kΩ
19
e_n
Input-Referred Voltage Noise Density f = 100 Hz
259
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
22
i_n
Input-Referred Current Noise
f = 100 Hz
100
kHz
V/ms
deg
dB
nV/√Hz
μV_PP
fA/√Hz
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where T_J > T_A. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2) All limits are guaranteed by testing, statistical analysis or design.
(3) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and
will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production
material.
5V DC Electrical Characteristics⁽¹⁾
Unless otherwise specified, all limits guaranteed for T_A = 25°C, V⁺ = 5V, V^− = 0V, V_CM = V_O = V⁺/2, and R_L > 1MΩ. Boldface
limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
V_OS
Input Offset Voltage
V_CM = 0.3V
V_CM = 4.7V
0.1
±1.0
±1.23
mV
0.1
±1.0
±1.23
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where T_J > T_A. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2) All limits are guaranteed by testing, statistical analysis or design.
(3) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and
will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production
material.
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