LPV521MGX Datasheet, PDF (16/29 Pages) Texas Instruments – LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier

LPV521
SNOSB14C – AUGUST 2009 – REVISED FEBRUARY 2013
www.ti.com
Typical Performance Characteristics (continued)
At T_J = 25°C, unless otherwise specified.
Frequency Response vs. C_L
Slew Rate vs. Supply Voltage
60
PHASE
C_L = 50 pF
40
C_L = 100 pF
20 ^GAIN
C_L = 200 pF
0
V_S = 5V
R_L = 10 M:
130
110
C_L = 20 pF ₉₀
70
50
30
10
-10
-30
-20
3.3
3.0
FALLING EDGE
2.7
2.4
RISING EDGE
2.1
1.8
A_V = +1
V_OUT = V_S
100
1k
10k
100k
1.5 2.3 3.1 3.9 4.7 5.5
FREQUENCY (Hz)
SUPPLY VOLTAGE (V)
Figure 50.
Figure 51.
1000
Voltage Noise vs. Frequency
0.1 to 10 Hz Time Domain Voltage Noise
15
V_S = 1.8V
10
V_CM = V_S/2
5
0
-5
100
1
V_S = 5V
10
100
1k
10k
FREQUENCY (Hz)
Figure 52.
0.1 to 10 Hz Time Domain Voltage Noise
15
10
-10
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 53.
0.1 to 10 Hz Time Domain Voltage Noise
15
V_S = 5V
10
V_CM = V_S/2
5
5
0
0
-5
-5
-10
V_S = 3.3V
V_CM = V_S/2
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 54.
-10
-15
-2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
1s/DIV
Figure 55.
16
Submit Documentation Feedback
Product Folder Links: LPV521
Copyright © 2009–2013, Texas Instruments Incorporated