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CD74HC299 Datasheet, PDF (4/10 Pages) Texas Instruments – High Speed CMOS Logic 8-Bit Universal Shift Register; Three-State
CD74HC299, CD74HCT299
DC Electrical Specifications (Continued)
PARAMETER
Quiescent Device
Current
SYMBOL
ICC
TEST
CONDITIONS
VI (V)
VCC or
GND
IO (mA)
0
VCC
25oC
-40oC TO 85oC -55oC TO 125oC
(V) MIN TYP MAX MIN MAX MIN MAX UNITS
6
-
-
8
-
80
-
160
µA
Three- State Leak- VIL or VIH VO = VCC
-
age Current
or GND
6
-
-
±0.5
-
±5
-
±10
µA
HCT TYPES
High Level Input
VIH
-
Voltage
-
4.5 to 2
-
-
2
-
2
-
V
5.5
Low Level Input
VIL
-
Voltage
-
4.5 to -
-
0.8
-
0.8
-
0.8
V
5.5
High Level Output VOH VIH or VIL
-0.02
4.5 4.4
-
-
4.4
-
4.4
-
V
Voltage
CMOS Loads
High Level Output
Voltage
TTL Loads
-4
4.5 3.98
-
-
3.84
-
3.7
-
V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
Low Level Output
Voltage
TTL Loads
4
4.5
-
-
0.26
-
0.33
-
0.4
V
Input Leakage
Current
II
VCC and
0
GND
5.5
-
±0.1
-
±1
-
±1
µA
Quiescent Device
ICC
VCC or
0
5.5
-
-
8
-
80
-
160
µA
Current
GND
Three- State Leak- VIL or VIH VO = VCC
-
age Current
or GND
6
-
-
±0.5
-
±5
-
±10
µA
Additional Quies-
cent Device Cur-
∆ICC
VCC
-2.1
rent Per
Input Pin: 1 Unit
Load
-
4.5 to -
100 360
-
450
-
490
µA
5.5
NOTE: For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
S1, MR
0.25
I/O0 - I/O7
0.25
DS0, DS7
0.25
S0, CP
0.6
OE1, OE2
0.3
NOTE: Unit
e.g., 360µA
load
max.
iast ∆2I5CoCCl.imit
specific
in
Static
Specifications
Table,
4