MSP430FE42X2 Datasheet, PDF (32/48 Pages) Texas Instruments – MIXED SIGNAL MICROCONTROLLER

MSP430FE42x2
MIXED SIGNAL MICROCONTROLLER
SLAS616 − JULY 2008
electrical characteristics over recommended operating free-air temperature (unless otherwise
noted) (continued)
ESP430CE1B, active energy measurement test conditions and accuracy, T_A = 25°C (See Note 1)
D f_ACLK = 32,768 Hz (watch crystal)
D f_MCLK = 8.39 MHz (FLL+)
D f_SD16 = f_MCLK/8 = 1.049 MHz
D Single point calibration at I = 10 A, PF = 0.5 lagging
D Measurements according to IEC1036
D Input conditions (unless otherwise noted): I_B = 6 A, I_MAX = n × I_B = 60 A, n = 10, V_N = 230 V, f_MAINS = 50 Hz
PARAMETER
TEST CONDITIONS
V_CC MIN
I = 0.05*I_B, V = V_N, PF = 1.0
3V
I = 0.1*I_B to I_MAX, V = V_N, PF = 1.0
I = 0.1*I_B, V = V_N, PF = 0.5 lagging
V1 SD16GAINx = 1 ^{3 V}
I1 SD16GAINx = 1 ^{3 V}
Maximum error I = 0.2*IB to IMAX, V = VN, PF = 0.5 lagging
3V
I = 0.1*I_B, V = V_N, PF = 0.8 leading
I = 0.2*I_B to I_MAX, V = V_N, PF = 0.8 leading
See Figure 14:
3V
R1 = 0Ω, RB = 12.4Ω _{3 V}
I = 0.2*I_B to I_MAX, V = V_N, PF = 0.25 lagging
3V
TYP
±0.17
±0.18
±0.19
±0.27
±0.15
±0.24
±0.38
MAX
UNIT
%
D Input conditions (unless otherwise noted): I_B = 10 A, I_MAX = n × I_B = 60 A, n = 6, V_N = 230 V, f_MAINS = 50 Hz
PARAMETER
TEST CONDITIONS
V_CC MIN
TYP
MAX UNIT
I = 0.05*I_B, V = V_N, PF = 1.0
3V
±0.11
I = 0.1*I_B to I_MAX, V = V_N, PF = 1.0
3V
±0.18
Maximum error
I = 0.1*I_B, V = V_N, PF = 0.5 lagging
I = 0.2*I_B to I_MAX, V = V_N, PF = 0.5 lagging
I = 0.1*I_B, V = V_N, PF = 0.8 leading
3V
V1 SD16GAINx = 1
3V
I1 SD16GAINx = 32
3V
±0.45
±0.33
%
±0.10
I = 0.2*I_B to I_MAX, V = V_N, PF = 0.8 leading
3V
±0.18
I = 0.2*I_B to I_MAX, V = V_N, PF = 0.25 lagging
3V
±0.51
NOTES: 1. Measurements performed using complete hardware solution. Error shown contain temperature dependencies of all components
including the MSP430FE42x2, crystal, and discrete components.
2. I1 SD16GAIN x = 1: CT part number = T60404−E4624−X101 ( Vacuumschmelze)
I1 SD16GAINx = 32: shunt part number = BVO−M−R0002−5.0 (Isabellenhütte Heusler GmbH KG)
I
1uH
CT
R₁
1uH 1k
I1+
33nF
R_B
1k
I1−
33nF
990k
1k
1.5k
1k
1uH
V1+
33nF
V1−
33nF
Figure 14. Energy Measurement Test Circuitry (SD16GAINx = 1)
32
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