TLC254 Datasheet, PDF (2/21 Pages) Texas Instruments – LinCMOSE QUAD OPERATIONAL AMPLIFIERS

TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y
LinCMOS™ QUAD OPERATIONAL AMPLIFIERS
SLOS003F – JUNE 1983 – REVISED AUGUST 1994
description (continued)
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and
signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications
are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the
difficult problems associated with single-battery and solar-cell-powered applications. This series includes
devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and
the small-outline packages. The device is also available in chip form.
These devices are characterized for operation from 0°C to 70°C.
DEVICE FEATURES
PARAMETER
TLC25L4_C
(LOW BIAS)
Supply current (Typ)
40 µA
Slew rate (Typ)
0.04 V/µA
Input offset voltage (Max)
TLC254C, TLC25L4C, TLC25M4C
TLC254AC, TLC25L4AC, TLC25M4AC
TLC254BC, TLC25L4BC, TLC25M4BC
Offset voltage drift (Typ)
10 mV
5 mV
2 mV
0.1 µV/month†
Offset voltage temperature coefficient (Typ)
0.7 µV/°C
Input bias current (Typ)
1 pA
Input offset current (Typ)
1 pA
† _{The long-term drift value applies after the first month.}
TLC25M4_C
(MEDIUM BIAS)
600 µA
0.6 V/µA
10 mV
5 mV
2 mV
0.1 µV/month†
2 µV/°C
1 pA
1 pA
TLC254_C
(HIGH BIAS)
4000 µA
4.5 V/µA
10 mV
5 mV
2 mV
0.1 µV/month†
5 µV/°C
1 pA
1 pA
equivalent schematic (each amplifier)
VDD
ESD-
IN +
Protective
Network
ESD-
IN –
Protective
Network
OUT
VDD _– /GND
2
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