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THS7319 Datasheet, PDF (2/34 Pages) Texas Instruments – 3-Channel, Very Low Power Video Amplifiers with EDTV Filters and 6-dB Gain
THS7319
SBOS468A – JUNE 2009 – REVISED JULY 2009.............................................................................................................................................................. www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
THS7319IZSVT
THS7319IZSVR
PACKAGE-LEAD
MicrostarCSP
9-Ball
PACKAGE
DESIGNATOR
ZSV
TRANSPORT MEDIA,
QUANTITY
Small Tape and Reel, 250
Tape and Reel, 3000
ECO STATUS(2)
Pb-Free, Green
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2) These packages conform to Lead (Pb)-free and green manufacturing specifications. Additional details including specific material content
can be accessed at www.ti.com/leadfree.
GREEN: TI defines Green to mean Lead (Pb)-Free and in addition, uses less package materials that do not contain halogens, including
bromine (Br), or antimony (Sb) above 0.1% of total product weight. N/A: Not yet available Lead (Pb)-Free; for estimated conversion
dates, go to www.ti.com/leadfree. Pb-FREE: TI defines Lead (Pb)-Free to mean RoHS compatible, including a lead concentration that
does not exceed 0.1% of total product weight, and, if designed to be soldered, suitable for use in specified lead-free soldering
processes.
ABSOLUTE MAXIMUM RATINGS(1)
Over operating free-air temperature range, unless otherwise noted.
Supply voltage, VS+ to GND
Input voltage, VI
Output current, IO
Continuous power dissipation
Maximum junction temperature, any condition(2), TJ
Maximum junction temperature, continuous operation, long-term reliability(3), TJ
Storage temperature range, TSTG
Human body model (HBM)
ESD rating:
Charge device model (CDM)
Machine model (MM)
THS7319
UNIT
5.5
V
–0.4 to VS+
V
±75
mA
See Dissipation Ratings Table
+150
°C
+125
°C
–65 to +150
°C
2000
V
1000
V
200
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.
(3) The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this
temperature may result in reduced reliability and/or lifetime of the device.
DISSIPATION RATINGS
PACKAGE
MicrostarCSP 9-Ball
(ZSV)
θJC
(°C/W)
100
θJA
(°C/W)
250 (2)
POWER RATING(1)
(TJ = +125°C)
AT TA = +25°C
AT TA = +85°C
400 mW
160 mW
(1) Power rating is determined with a junction temperature of +125°C. This temperature is the point where performance starts to degrade
and long-term reliability starts to be reduced. Thermal management of the final printed circuit board (PCB) should strive to keep the
junction temperature at or below +125°C for best performance and reliability.
(2) These data were measured with the JEDEC High-K test PCB. For the JEDEC low-K test PCB, θJA is +550°C/W.
2
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