LPV542 Datasheet, PDF (19/29 Pages) Texas Instruments – LPV542 Dual Nanopower 1.8 V, 490nA, RRIO CMOS Operational Amplifier

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11 Device and Documentation Support
LPV542
SNOSCX9 – MARCH 2015
11.1 Device Support
11.1.1 Development Support
TINA-TI SPICE-Based Analog Simulation Program, http://www.ti.com/tool/tina-ti
DIP Adapter Evaluation Module, http://www.ti.com/tool/dip-adapter-evm
TI Universal Operational Amplifier Evaluation Module, http://www.ti.com/tool/opampevm
TI FilterPro Filter Design software, http://www.ti.com/tool/filterpro
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
• AN-1798 Designing with Electro-Chemical Sensors, SNOA514
• AN-1803 Design Considerations for a Transimpedance Amplifier, SNOA515
• AN-1852 Designing With pH Electrodes, SNOA529
• Compensate Transimpedance Amplifiers Intuitively, SBOA055
• Transimpedance Considerations for High-Speed Operational Amplifiers, SBOA112
• Noise Analysis of FET Transimpedance Amplifiers, SBOA060
• Circuit Board Layout Techniques, SLOA089
• Handbook of Operational Amplifier Applications, SBOA092
11.3 Trademarks
All trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2015, Texas Instruments Incorporated
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