English
Language : 

LMH6624MF Datasheet, PDF (16/31 Pages) Texas Instruments – LMH6624/LMH6626 Single/Dual Ultra Low Noise Wideband Operational Amplifier
LMH6624
SNOSA42F – NOVEMBER 2002 – REVISED MARCH 2013
www.ti.com
Figure 51. Inverting Amplifier Configuration
TOTAL INPUT NOISE vs. SOURCE RESISTANCE
To determine maximum signal-to-noise ratios from the LMH6624/LMH6626, an understanding of the interaction
between the amplifier’s intrinsic noise sources and the noise arising from its external resistors is necessary.
Figure 52 describes the noise model for the non-inverting amplifier configuration showing all noise sources. In
addition to the intrinsic input voltage noise (en) and current noise (in = in+ = in−) source, there is also thermal
voltage noise (et = √(4KTR)) associated with each of the external resistors. Equation 1 provides the general form
for total equivalent input voltage noise density (eni). Equation 2 is a simplification of Equation 1 that assumes
Figure 52. Non-Inverting Amplifier Noise Model
(2)
Rf||Rg = Rseq for bias current cancellation. Figure 53 illustrates the equivalent noise model using this assumption.
Figure 54 is a plot of eni against equivalent source resistance (Rseq) with all of the contributing voltage noise
source of Equation 2. This plot gives the expected eni for a given (Rseq) which assumes Rf||Rg = Rseq for bias
current cancellation. The total equivalent output voltage noise (eno) is eni*AV.
Figure 53. Noise Model with Rf||Rg = Rseq
16
Submit Documentation Feedback
Copyright © 2002–2013, Texas Instruments Incorporated
Product Folder Links: LMH6624