SI7252DP Datasheet, PDF (5/13 Pages) Vishay Siliconix – Dual N-Channel 100 V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
55
Si7252DP
Vishay Siliconix
32
44
24
33
16
22
8
11
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
2.0
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Junction to Case
1.6
1.2
0.8
0.4
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Junction to Ambient
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62634
For technical questions, contact: [e-mail]
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000