SI7252DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual N-Channel 100 V (D-S) MOSFET

New Product
Si7252DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.060
10
T_J = 150 °C
1
0.1
0.01
T_J = 25 °C
0.048
0.036
0.024
0.012
I_D = 15 A
T_J = 125 °C
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.2
80
- 0.1
- 0.4
60
I_D = 5 mA
40
- 0.7
I_D = 250 μA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
I_DM Limited
10
I_D Limited
100 us
1
1 ms
10 ms
Limited by R_DS(on)*
0.1
100 ms
1s
T_A = 25 °C
Single Pulse
0.01
10 s
BVDSS Limited
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62634
For technical questions, contact: [e-mail]
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000