SI7252DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
80
V_GS = 10 V thru 5 V
64
64
Si7252DP
Vishay Siliconix
48
32
16
0
0
0.0220
V_GS = 4 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
48
T_C = 25 °C
32
16
T_C = 125 °C
0
T_C = - 55 °C
0.0
1.6
3.2
4.8
6.4
8.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
0.0200
0.0180
0.0160
0.0140
V_GS = 4.5 V
V_GS = 7.5 V
V_GS = 10 V
0.0120
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1280
C_iss
960
C_oss
640
320
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 10 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 75 V
2
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
2.0
I_D = 15 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
0.8
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62634
For technical questions, contact: [e-mail]
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000