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SI7252DP Datasheet, PDF (2/13 Pages) Vishay Siliconix – Dual N-Channel 100 V (D-S) MOSFET | |||
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Si7252DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ïVDS/TJ
ïVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS ï³ï 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS ï½ï 10 V, ID = 15 A
VGS ï½ï 7.5 V, ID = 12 A
Forward Transconductancea
VGS ï½ï 6 V, ID = 10 A
gfs
VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 50 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
VDS = 50 V, VGS = 10 V, ID = 10 A
Qg
VDS = 50 V, VGS = 7.5 V, ID = 10 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Out Charge
Qoss
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ï£ 300 µs, duty cycle ï£ 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 6 V, ID = 10 A
VDS = 50 V, VGS = 0 V
f = 1 MHz
VDD = 50 V, RL = 5 ï
ID ï 10 A, VGEN = 7.5 V, Rg = 1 ï
VDD = 50 V, RL = 5 ï
ID ï 10 A, VGEN = 10 V, Rg = 1 ï
TC = 25 °C
IS = 5 A, VGS ï½ï 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
100
1.5
30
0.4
Typ. Max. Unit
67
- 5.7
0.014
0.015
0.016
40
3.5
± 100
1
10
0.017
0.018
0.020
V
mV/°C
V
nA
µA
A
ï
S
1170
311
pF
33
17.5
27
13.4
20
12.2
18.5
nC
3.5
5.2
27
41
1.8
3.6
ï
12
24
13
26
18
36
7
14
ns
8
16
12
24
20
40
7
14
38
A
80
0.78
1.2
V
39
75
ns
53
100
nC
26
ns
13
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62634
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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