THN6601B Datasheet, PDF (5/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

Specification
THN6601B
□ Application Information
RF performance at T_S ≤ 60 ℃ in common emitter configuration
Operation Mode
CW, class-AB
f (MHz)
465
V_CE (V)
6
P_OUT (dBm)
30
G_P (dB)
≥ 11
η_C (%)
56
Output Power or Power Gain
vs. Input Power
40
18
35
f = 465 MHz, V = 6 V, I = 5 mA
CE
CQ
16
30
25
20
P
OUT
15
10
14
12
G
P
10
8
6
4
5
2
0
0
0 5 10 15 20 25 30
Input Power, P (dBm)
IN
Power Gain or Collector Efficiency
vs. Output Power
20
100
18
f = 465 MHz, V = 6 V, I = 4 mA
CE
CQ
90
16
80
G
14
P
70
12
60
10
50
η
C
8
40
6
30
4
20
2
10
0
0
10 15 20 25 30 35
Output Power, P (dBm)
OUT
July 2005.
Page 5 of 7
http://www.tachyonics.co.kr
Rev. 1.0