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| THN6601B Datasheet, PDF (2/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR | |||
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Specification
THN6601B
â¡ Thermal Characteristics
Symbol
Parameter
Condition
Value
Unit
Rth j-s
Thermal resistance from junction
Ptot = 1.5 W; TS = 60 â; note 1
55
K/W
to soldering point
Note 1. TS is the temperature at the soldering point of the collector pin.
â¡ Electrical Characteristics (TA = 25 â)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Maximum Available Gain
Insertion Power Gain
Reverse Transfer Capacitance
Symbol
ICBO
ICEO
IEBO
hFE
fT
MAG
|S21|2
Cre
Test Conditions
VCB = 19 V, IE = 0 mA
VCE = 12 V, IB = 0 mA
VEB = 1.5 V, IC = 0 mA
VCE = 5 V, IC = 100 mA
VCE = 5 V, IC = 100 mA
VCE = 7 V, IC = 100 mA
VCE = 5 V, IC = 100 mA, f = 1 GHz
VCE = 7 V, IC = 100 mA, f = 1 GHz
VCE = 5 V, IC = 100 mA, f = 1 GHz
VCE = 7 V, IC = 100 mA, f = 1 GHz
VCB = 6 V, IE = 0 mA, f = 1 MHz
Min. Typ. Max.
0.5
10
0.5
50
300
4
6
5
7.0
8
11
9
12
5
7
5
7
1.9
Unit
ã
ã
ã
GHz
GHz
dB
dB
dB
dB
pF
â¡ hFE Classification
Marking
hFE Value
R1601
50 - 200
R1601·
170 - 300
July 2005.
Page 2 of 7
http://www.tachyonics.co.kr
Rev. 1.0
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