THN6601B Datasheet, PDF (3/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

Specification
THN6601B
□ Typical Characteristics ( T_A = 25℃, unless otherwise specified)
Power Dissipation
vs. Ambient Temperature
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125 150
Ambient Temperature, T (oC)
A
Reverse Transfer Capacitance
vs. Collector to Base Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
2
4
6
8
10
Collector to Base Voltage, V (V)
CB
DC Current Gain
vs. Collector Current
160
140
120
V =5V
CE
100
80
60
40
20
0
10^-3
10^-2
10^-1
10⁰
Collector Current, I (A)
C
Collector Current
vs. Base to Emitter Voltage
30
V =5V
CE
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V (V)
BE
July 2005.
Page 3 of 7
http://www.tachyonics.co.kr
Rev. 1.0