THN6601B Datasheet, PDF (4/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

Specification
THN6601B
Collector Current
vs. Collector to Emitter Voltage
0.7
0.6
I step = 1.8 m A
B
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
Collector to Em itter Voltage, V (V)
CE
Gain Bandwidth Product
vs. Collector Current
10
V =5V
CE
V =7V
CE
8
6
4
2
0
10
100
1000
Collector Current, I (mA)
C
Insertion Power Gain
vs. Collector Current
12
V =5V
CE
10
V =7V
CE
f = 1 GHz
8
6
4
2
0
10
100
1000
Collector Current, I (mA)
C
Maximum Available Gain
vs. Collector Current
20
18
V =5V
CE
V =7V
16
CE
f = 1 GHz
14
12
10
8
6
4
2
0
10
100
Collector Current, I (mA)
C
1000
July 2005.
Page 4 of 7
http://www.tachyonics.co.kr
Rev. 1.0