THN6601B Datasheet, PDF (1/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

Specification
NPN SiGe RF TRANSISTOR
THN6601B
□ Applications
- UHF and VHF wide band amplifier
□ Features
- High gain bandwidth product
f_T = 7 GHz
- High power gain
|S₂₁|² = 7 dB @ V_CE = 5 V, I_C = 100 mA, f = 1 GHz
- High power
P_OUT = 32 dBm (1.5 W) @ V_CE = 6 V, I_CQ = 5 mA, f = 465 MHz
□ Absolute Maximum Ratings (T_A = 25 ℃)
Param eter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Sym bol
BV_CBO
BV_CEO
BV_EBO
I_C
P_tot
T_j
T_stg
SOT223
Unit in mm
6.5
3.0
4
1
23
2.3
0.7
4.6
PIN CONFIGURATION
1. Emitter
2. Base
3. Emitter
4. Collector
Ratings
Unit
20
V
12
V
3
V
500
mA
1.5
W
150
℃
-65 ~ 150
℃
July 2005.
Page 1 of 7
http://www.tachyonics.co.kr
Rev. 1.0