STB6N52K3 Datasheet, PDF (9/22 Pages) STMicroelectronics – Extremely high dv/dt capability

STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
μF
D.U.T.
3.3
μF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped Inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100μH
B
3.3
B
μF
D
G
RG
S
1000
μF
VDD
Vi
L
VD
2200
3.3
μF
μF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
V(BR)DSS
VD
Figure 24. Switching time waveform
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 14994 Rev 2
9/22