STB6N52K3 Datasheet, PDF (7/22 Pages) STMicroelectronics – Extremely high dv/dt capability

STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
Electrical characteristics
Figure 8. Output characteristics
ID
(A)
VGS=10V
10
7V
8
Figure 9.
AM08856v1
ID
(A)
7
6
Transfer characteristics
VDS=15V
5
6
6V
4
2
5V
0
0
5 10 15 20 25 VDS(V)
4
3
2
1
0
0
2
4
6
8
AM08857v1
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
VGS
(V)
12
VDS
10
8
VDD=420V
ID=5A
VGS
AM08858v1
450
400
350
300
250
RDS(on)
(Ω)
1.4
1.3
1.2
AM08859v1
6
200
150
4
100
2
50
0
0
0
10
20
30
Qg(nC)
1.1
1.0
0.9
0.8
0
1
2
3
4
ID(A)
Figure 12. Capacitance variations
C
(pF)
1000
100
10
1
0.1
1
10
100
Figure 13. Output capacitance stored energy
AM08860v1
Eoss
(µJ)
AM08861v1
4.0
Ciss
3.5
3.0
2.5
2.0
Coss
1.5
Crss
1.0
VDS(V)
0.5
0
0 100 200 300 400 500 600 VDS(V)
Doc ID 14994 Rev 2
7/22