STB6N52K3 Datasheet, PDF (5/22 Pages) STMicroelectronics – Extremely high dv/dt capability

STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 24)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
5A
-
20 A
-
1.5 V
206
ns
- 1.4
µC
14
A
233
ns
- 1.7
µC
15
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
BV_GSO
Gate-source breakdown
voltage
Igs=± 1 mA (open drain)
Min Typ Max Unit
30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 14994 Rev 2
5/22