STB6N52K3 Datasheet, PDF (3/22 Pages) STMicroelectronics – Extremely high dv/dt capability

STB6N52K3, STD6N52K3, STF6N52K3, STP6N52K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 D²PAK DPAK TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
I_AR
E_AS
dv/dt ⁽³⁾
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_j max)
Single pulse avalanche energy
(starting T_j = 25°C, I_D = I_AR, V_DD = 50V)
Peak diode recovery voltage slope
525
± 30
5
3
20
70
2.5
110
12
V
V
5 ⁽¹⁾
A
3 ⁽¹⁾
A
20 ⁽¹⁾
A
25
W
A
mJ
V/ns
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
T_stg Storage temperature
T_j Max. operating junction temperature
- 55 to 150
°C
150
°C
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 5 A, di/dt = 400 V, V_DS peak ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS.
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb Thermal resistance junction-pcb max
R_thj-amb Thermal resistance junction-ambient max
T_l
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 D²PAK DPAK TO-220FP
1.79
30 50
62.5
5
°C/W
°C/W
62.5 °C/W
300
300
°C
Doc ID 14994 Rev 2
3/22