STB6N52K3 Datasheet, PDF (1/22 Pages) STMicroelectronics – Extremely high dv/dt capability

STB6N52K3, STD6N52K3
STF6N52K3, STP6N52K3
N-channel 525 V, 1 Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220
SuperMESH3™ Power MOSFET
Features
Order codes
V_DSS
R_DS(on)
max
I_D
STB6N52K3
STD6N52K3
STF6N52K3
STP6N52K3
525 V
< 1.2 Ω
5A
5 A⁽¹⁾
5A
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Pw
70 W
25 W
70 W
3
2
1
TO-220FP
3
1
DPAK
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
D(2)
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STB6N52K3
STD6N52K3
STF6N52K3
STP6N52K3
6N52K3
G(1)
S(3)
AM01476v1
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
March 2011
Doc ID 14994 Rev 2
1/22
www.st.com
22