STB42N60M2-EP Datasheet, PDF (9/20 Pages) STMicroelectronics – Extremely low gate charge

STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Test circuits
3
Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
VDD
12 V
47 k Ω
100 nF
1 kΩ
Vi ≤ V GS
2200 μ F
1 kΩ
PW
I G = CONST
2.7 k Ω
47 k Ω
100 Ω
D.U.T.
VG
AM01469v 1
Figure 19: Test circuit for inductive load
switching and diode recovery times
Figure 20: Unclamped inductive load test circuit
Figure 21: Unclamped inductive waveform
V_{(B R)DS S}
V_D
I _DM
I_D
V_DD
V_DD
AM01472v 1
Figure 22: Switching time waveform
t _on
t_off
t _d(on)
t_r
t _d(off)
t_f
90%
90%
10%
0
10%
V_DS
90%
V_GS
0
10%
AM01473v 1
DocID027327 Rev 1
9/20