STB42N60M2-EP Datasheet, PDF (3/20 Pages) STMicroelectronics – Extremely low gate charge

STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature
Max. operating junction temperature
± 25
34
22
136
250
15
50
- 55 to 150
150
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.}
(3)_{VDS ≤ 480 V}
Unit
V
A
A
A
W
V/ns
V/ns
°C
°C
Symbol
Table 3: Thermal data
Value
Parameter
D²PAK TO-220
TO-
247
Rthj-case
Rthj-pcb⁽¹⁾
Thermal resistance junction-case max
Thermal resistance junction-pcb max
0.50
30
Rthj-amb
Thermal resistance junction-ambient max
62.5
50
Notes:
(1)_{When mounted on FR-4 board of inch², 2oz Cu.}
Unit
°C/W
°C/W
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not
repetetive (pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value
6
800
Unit
A
mJ
DocID027327 Rev 1
3/20