STB42N60M2-EP Datasheet, PDF (1/20 Pages) STMicroelectronics – Extremely low gate charge

STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
D²PAK
2
3
1
TAB
TAB
TO-220
1 ²³
23
TO-247
1
Features
Order code
VDS @ TJmax RDS(on) max. ID
STB42N60M2-EP
STP42N60M2-EP
650 V
0.087 Ω 34 A
STW42N60M2-EP
• Extremely low gate charge
• Excellent output capacitance (C_OSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Figure 1: Internal schematic diagram
D(2, TAB)
Applications
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
G(1)
S(3)
Order code
STB42N60M2-EP
STP42N60M2-EP
STW42N60M2-EP
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching losses, rendering them suitable for the
most demanding very high frequency converters.
AM01476v1
Table 1: Device summary
Marking
Package
Packaging
42N60M2EP
D²PAK
TO-220
TO-247
Tape and reel
Tube
January 2015
DocID027327 Rev 1
This is information on a product in full production.
1/20
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