STB42N60M2-EP Datasheet, PDF (4/20 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
2
Electrical characteristics
T_C = 25 °C unless otherwise specified
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage Drain
current
IGSS
VGS(th)
RDS(on)
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C
VDS = 0 V, VGS = ±25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 17 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.076 0.087 Ω
Symbol
Parameter
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
Coss
(1)
eq.
Equivalent output
capacitance
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
Min.
-
-
Typ. Max. Unit
2370 - pF
112 - pF
-
2.5
-
pF
VDS = 0 to 480 V, VGS = 0 V
-
f = 1 MHz, ID = 0 A
-
VDD = 480 V, ID = 34 A,
-
VGS = 10 V (see Figure 18:
-
"Gate charge test circuit")
-
454 - pF
4.5
-
Ω
55
- nC
8.5
-
nC
25
- nC
Notes:
(1)_{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS
Symbol
Parameter
Table 7: Switching energy
Test conditions
E(off)
Turn-off energy
(from 90% VGS to 0% ID)
VDD = 400 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
VDD = 400 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
Min. Typ. Max. Unit
-
13
-
µJ
-
14.5 -
µJ
4/20
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