STB42N60M2-EP Datasheet, PDF (7/20 Pages) STMicroelectronics – Extremely low gate charge

STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Figure 8: Gate charge vs gate-source voltage
V_GS
(V)
12
V_DS
GIPG080120151019ALS ^VDS
(V)
500
10
400
8
300
6
V_DD = 480 V
I_D = 34 A
200
4
2
100
0
0
0 10 20 30 40 50 60 Q_g(nC)
Electrical characteristics
Figure 9: Static drain-source on-resistance
R_DS(on)
(Ω)
GIPG080120151046ALS
0.080
0.078
0.076
V_GS = 10 V
0.074
0.072
0 5 10 15 20 25 30 35 I_D(A)
Figure 10: Capacitance variations
C
(pF)
GIPG080120151120ALS
10000
1000
100
f = 1 Mhz
10
1
0.1
1
10
C_ISS
C_OSS
100
C_RSS
V_DS(V)
Figure 11: Output capacitance stored energy
E_OSS
(µJ)
GIPG080120151125ALS
18
16
14
12
10
8
6
4
2
0
0
200
400
600
V_DS(V)
Figure 12: Turn-off switching loss vs drain
current
E_OFF
(µJ)
GIPG080120151154ALS
18
16
14
12
10
0 1 2 3 4 5 6 7 ^I_D^(A)
Figure 13: Normalized gate threshold voltage
vs temperature
V_GS(th)
(norm)
GIPG080120151205ALS
1.1
1
0.9
I_D = 250 µA
0.8
0.7
0.6
-75 -25
25
75
125 T_J(°C)
DocID027327 Rev 1
7/20