STB22NM60N Datasheet, PDF (9/23 Pages) STMicroelectronics – N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

STB/F/I/P/W22NM60N
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
µF
D.U.T.
3.3
µF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
V(BR)DSS
VD
Figure 22. Switching time waveform
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 15853 Rev 4
9/23