STB22NM60N Datasheet, PDF (3/23 Pages) STMicroelectronics – N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

STB/F/I/P/W22NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
D²PAK
I²PAK
Value
TO-220
TO-247
TO-220FP
Unit
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt⁽³⁾
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
± 30
16
10
64
125
15
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
T_J Operating junction temperature
T_stg Storage temperature
-55 to 150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 16 A, di/dt ≤ 400 A/µs, V_DSpeak ≤V_(BR)DSS, V_DD = 80% V_(BR)DSS
16 ⁽¹⁾
10 ⁽¹⁾
64 ⁽¹⁾
30
2500
V
A
A
A
W
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
R_thj-case
Thermal resistance junction-case
max.
R_thj-amb
Thermal resistance junction-
ambient max.
R_thj-pcb(1)
Thermal resistance junction-pcb
max.
30
T_J
Maximum lead temperature for
soldering purpose
1
62.5
50
300
4.17 °C/W
62.5 °C/W
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Thermal data
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
6
A
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
300
mJ
Doc ID 15853 Rev 4
3/23