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STB22NM60N Datasheet, PDF (4/23 Pages) STMicroelectronics – N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET
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Electrical characteristics
2
Electrical characteristics
STB/F/I/P/W22NM60N
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 8 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
100 nA
2
3
4
V
0.2 0.22 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
1330
pF
-
84
- pF
4.6
pF
Coss
(1)
eq.
Output equivalent
capacitance
VDS = 0 to 480 V, VGS = 0
-
181
- pF
Rg
Gate input resistance f=1 MHz open drain
-
4.7
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 16 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
44
nC
-
6
- nC
25
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/23
Doc ID 15853 Rev 4
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