STB22NM60N Datasheet, PDF (1/23 Pages) STMicroelectronics – N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60N
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET
in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247
Features
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
V_DSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
R_DS(on)
max.
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
I_D
16 A
16 A
16 A
16 A
16 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
TO-247
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
Marking
22NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
January 2011
Doc ID 15853 Rev 4
1/23
www.st.com
23