STB22NM60N Datasheet, PDF (5/23 Pages) STMicroelectronics – N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET

STB/F/I/P/W22NM60N
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r(v)
t_d(off)
t_f(i)
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
V_DD = 300 V, I_D = 8 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min. Typ. Max Unit
11
ns
18
ns
-
-
74
ns
38
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 16 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 16 A, di/dt = 100 A/µs
V_DD= 60 V
(see Figure 19)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 16 A, di/dt = 100 A/µs
V_DD= 60 V T_J = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
16 A
-
64 A
-
1.6 V
296
ns
-4
µC
26.8
A
350
ns
- 4.7
µC
27
A
Doc ID 15853 Rev 4
5/23