STB13N60M2 Datasheet, PDF (9/23 Pages) STMicroelectronics – Extremely low gate charge

STB13N60M2, STD13N60M2
Test circuits
3
Test circuits
Figure 16: Test circuit for resistive load
switching times
Figure 17: Test circuit for gate charge
behavior
V_DD
RL
V_GS
pulse width
+
2200
μF
1 kΩ
I_G= CONST
2.7 kΩ
47 kΩ
100 Ω
D.U.T.
V_G
AM01469v10
Figure 18: Test circuit for inductive load
switching and diode recovery times
Figure 19: Unclamped inductive load test
circuit
Figure 20: Unclamped inductive waveform
Figure 21: Switching time waveform
DocID024569 Rev 4
9/23