STB13N60M2 Datasheet, PDF (3/23 Pages) STMicroelectronics – Extremely low gate charge

STB13N60M2, STD13N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
± 25
11
7
44
110
15
50
- 55 to 150
V
A
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.}
(3)_{VDS ≤ 480 V.}
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb⁽¹⁾
Thermal resistance junction-case max.
Thermal resistance junction-pcb max.
Notes:
(1)_{When mounted on FR-4 board of 1 inch², 2 oz Cu.}
Value
D²PAK
DPAK
1.14
30
50
Unit
°C/W
Symbol
IAR
EAS
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax.)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR;
VDD = 50 V)
Value
Unit
2.8
A
125
mJ
DocID024569 Rev 4
3/23