STB13N60M2 Datasheet, PDF (1/23 Pages) STMicroelectronics – Extremely low gate charge

STB13N60M2,
STD13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A
MDmesh™ M2 Power MOSFETs in D²PAK and DPAK packages
Datasheet - production data
Features
Order code
STB13N60M2
STD13N60M2
VDS@TJMAX.
650 V
RDS(on) max.
0.38 Ω
ID
11 A
Figure 1: Internal schematic diagram
D(2, TAB)
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
G(1)
S(3)
Order code
STB13N60M2
STD13N60M2
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
AM01476v1_tab
Table 1: Device summary
Marking
Package
13N60M2
D²PAK
DPAK
Packing
Tape and reel
September 2016
DocID024569 Rev 4
This is information on a product in full production.
1/23
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