STB13N60M2 Datasheet, PDF (5/23 Pages) STMicroelectronics – Extremely low gate charge

STB13N60M2, STD13N60M2
Symbol Parameter
td(on)
Turn-on
delay time
tr
Rise time
td(off)
Turn-off-
delay time
tf
Fall time
Table 7: Switching times
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
-
11
-
ns
VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω,
VGS = 10 V (see Figure 16: "Test circuit for
-
10
-
ns
resistive load switching times" and Figure 21:
"Switching time waveform")
-
41
-
ns
- 9.5
-
ns
Symbol Parameter
ISD
Source-drain
current
ISDM⁽¹⁾
Source-drain
current
(pulsed)
VSD ⁽²⁾
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
trr
Reverse
recovery time
Reverse
Qrr
recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Min. Typ. Max. Unit
-
11 A
-
44 A
VGS = 0 V, ISD = 11 A
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V
(see Figure 18: "Test circuit for inductive
load switching and diode recovery times")
-
1.6 V
- 297
ns
- 2.8
µC
- 18.5
A
- 394
ns
ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,
Tj = 150 °C (see Figure 18: "Test circuit for - 3.8
µC
inductive load switching and diode
recovery times")
- 19
A
Notes:
(1)_{Pulse width is limited by safe operating area.}
(2)_{Pulsed: pulse duration = 300 µs, duty cycle 1.5%.}
DocID024569 Rev 4
5/23