STB13N60M2 Datasheet, PDF (4/23 Pages) STMicroelectronics – Extremely low gate charge

Electrical characteristics
STB13N60M2, STD13N60M2
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero-gate voltage drain
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C ⁽¹⁾
IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
600
V
1 µA
100 µA
±10 µA
2
3
4
V
0.35 0.38 Ω
Notes:
(1)_{Defined by design, not subject to production test.}
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output
capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source
charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS= 100 V, f = 1 MHz, VGS = 0 V
VDS = 0 to 480 V, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 11 A, VGS = 10 V
(see Figure 17: "Test circuit for gate
charge behavior")
Min. Typ. Max. Unit
- 580 - pF
-
32
-
pF
- 1.1 - pF
-
120 - pF
-
6.6 -
Ω
-
17
-
nC
- 2.5 - nC
-
9
- nC
Notes:
(1)_{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
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DocID024569 Rev 4