STB12NM50ND_09 Datasheet, PDF (9/16 Pages) STMicroelectronics – N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

STB12NM50ND, STD12NM50ND, STF12NM50ND
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
µF
D.U.T.
3.3
µF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
µF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100µH
B
3.3
B
µF
D
G
RG
S
1000
µF
VDD
Vi
L
VD
2200
3.3
µF
µF
VDD
ID
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
V(BR)DSS
VD
ton
tdon
tr
toff
tdoff tf
VDD
IDM
ID
0
VDD
90%
10% VDS
90%
VGS
90%
10%
AM01472v1
0
10%
AM01473v1
Doc ID 14936 Rev 2
9/16